Recently, Changjing Technology undertook the Jiangsu Provincial Key R&D Program project, Key Technology Research and Development of Low Power, High Reliability Superjunction MOS Devices, and successfully passed the acceptance of the Jiangsu Provincial Department of Science and Technology.

The project acceptance committee conducted a comprehensive review of the project research content, completion status of indicators, key technologies, innovations, project effectiveness, and funding utilization, and reviewed relevant materials. After on-site interviews and discussion, it was unanimously agreed that the project had completed the specified indicators and the funding utilization was reasonable, and thus the acceptance was granted.

The Key Technology Research and Development of Low Power, High Reliability Superjunction MOS Devices project is led by Changjing Technology and jointly undertaken by the University of Electronic Science and Technology of China. The project aims to break through the existing physical limits of superlattice devices and conduct research on the design and preparation technology of new structural devices, as well as the reliability issues of superlattice devices. It is of great significance for fundamentally improving China's competencies in superlattice MOS technology and achieving import substitution through independent innovation.